The STGB3NC120HDT4 is a 1.2kV insulated gate bipolar transistor with a maximum collector current of 14A and a maximum power dissipation of 75W. It is packaged in a D2PAK case and is suitable for surface mount applications. The transistor has a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It is compliant with RoHS regulations and is available in a tape and reel packaging with a quantity of 1000 units.
PackageD2PAK
MountingSurface Mount
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Technical Specifications
Stmicroelectronics STGB3NC120HDT4 technical specifications.
General
| Package/Case | D2PAK |
| Collector Emitter Breakdown Voltage | 1.2kV |
| Collector Emitter Saturation Voltage | 2.3V |
| Collector Emitter Voltage (VCEO) | 1.2kV |
| Collector-emitter Voltage-Max | 2.8V |
| Input Type | STANDARD |
| Lead Free | Lead Free |
| Max Breakdown Voltage | 1.2kV |
| Max Collector Current | 14A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 75W |
| Mount | Surface Mount |
| Package Quantity | 1000 |
| Packaging | Tape and Reel |
| Radiation Hardening | No |
| Reverse Recovery Time | 51ns |
| RoHS Compliant | Yes |
| Series | PowerMESH™ |
| Turn-Off Delay Time | 118ns |
| Turn-On Delay Time | 15ns |
| Weight | 0.070548oz |
Compliance
| RoHS | Compliant |
Datasheet
Stmicroelectronics STGB3NC120HDT4 Datasheet
Download the complete datasheet for Stmicroelectronics STGB3NC120HDT4 to view detailed technical specifications.
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