N-channel IGBT with a 600V collector-emitter breakdown voltage and a 14A continuous collector current. Features a very fast switching speed with a 18.5ns turn-on delay and 72ns turn-off delay, complemented by an ultrafast diode with a 37ns reverse recovery time. Designed for surface mounting in a D2PAK package, this component offers a maximum power dissipation of 80W and operates across a temperature range of -55°C to 150°C. It is RoHS compliant and lead-free.
PackageD2PAK
Current Rating14A
MountingSurface Mount
Power25W
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Technical Specifications
Stmicroelectronics STGB7NC60HDT4 technical specifications.
General
| Package/Case | D2PAK |
| Collector Emitter Breakdown Voltage | 600V |
| Collector Emitter Saturation Voltage | 2.5V |
| Collector Emitter Voltage (VCEO) | 600V |
| Collector-emitter Voltage-Max | 2.5V |
| Current Rating | 14A |
| Input Type | STANDARD |
| Lead Free | Lead Free |
| Max Breakdown Voltage | 600V |
| Max Collector Current | 25A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 80W |
| Mount | Surface Mount |
| Package Quantity | 1000 |
| Packaging | Tape and Reel |
| Power Dissipation | 25W |
| Radiation Hardening | No |
| Reverse Recovery Time | 37ns |
| RoHS Compliant | Yes |
| Series | PowerMESH™ |
| Turn-Off Delay Time | 72ns |
| Turn-On Delay Time | 18.5ns |
| DC Rated Voltage | 600V |
Compliance
| RoHS | Compliant |
Datasheet
Stmicroelectronics STGB7NC60HDT4 Datasheet
Download the complete datasheet for Stmicroelectronics STGB7NC60HDT4 to view detailed technical specifications.
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