N-channel IGBT with a 600V collector-emitter breakdown voltage and a 14A continuous collector current. Features a very fast switching speed with a 18.5ns turn-on delay and 72ns turn-off delay, complemented by an ultrafast diode with a 37ns reverse recovery time. Designed for surface mounting in a D2PAK package, this component offers a maximum power dissipation of 80W and operates across a temperature range of -55°C to 150°C. It is RoHS compliant and lead-free.
PackageD2PAK
Current Rating14A
MountingSurface Mount
Power25W
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Technical Specifications
Stmicroelectronics STGB7NC60HDT4 technical specifications.
General
Package/Case
D2PAK
Collector Emitter Breakdown Voltage
600V
Collector Emitter Saturation Voltage
2.5V
Collector Emitter Voltage (VCEO)
600V
Collector-emitter Voltage-Max
2.5V
Current Rating
14A
Input Type
STANDARD
Lead Free
Lead Free
Max Breakdown Voltage
600V
Max Collector Current
25A
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
80W
Mount
Surface Mount
Package Quantity
1000
Packaging
Tape and Reel
Power Dissipation
25W
Radiation Hardening
No
Reverse Recovery Time
37ns
RoHS Compliant
Yes
Series
PowerMESH™
Turn-Off Delay Time
72ns
Turn-On Delay Time
18.5ns
DC Rated Voltage
600V
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STGB7NC60HDT4 Datasheet
Download the complete datasheet for Stmicroelectronics STGB7NC60HDT4 to view detailed technical specifications.
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