N-channel Insulated Gate Bipolar Transistor (IGBT) for surface mounting in a DPAK (TO-252) package. Features a 600V collector-emitter voltage and 18A continuous collector current, with a maximum power dissipation of 60000mW. This single IGBT chip offers a typical collector-emitter saturation voltage of 1.45V and operates across a temperature range of -55°C to 150°C. The 3-pin DPAK package has gull-wing leads and a tab for enhanced thermal performance.
PackageDPAK
MountingSurface Mount
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Technical Specifications
Stmicroelectronics STGD10NC60SDT4 technical specifications.
General
Package Family Name
TO-252
Package/Case
DPAK
Package Description
Deca Watt Package
Lead Shape
Gull-wing
Pin Count
3
PCB
2
Tab
Tab
Package Length (mm)
6.6(Max)
Package Width (mm)
6.2(Max)
Package Height (mm)
2.4(Max)
Seated Plane Height (mm)
2.63(Max)
Pin Pitch (mm)
2.3(Max)
Package Material
Plastic
Mounting
Surface Mount
Jedec
TO-252AA
Channel Type
N
Configuration
Single
Maximum Collector-Emitter Voltage
600V
Maximum Gate Emitter Voltage
±20V
Maximum Continuous Collector Current
18A
Maximum Power Dissipation
60000mW
Typical Collector Emitter Saturation Voltage
1.45V
Min Operating Temperature
-55°C
Max Operating Temperature
150°C
Compliance
Cage Code
SCR76
EU RoHS
Yes with Exemption
Schedule B
8541290080
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
Radiation Hardening
No
RoHS Versions
2011/65/EU, 2015/863
Datasheet
Stmicroelectronics STGD10NC60SDT4 Datasheet
Download the complete datasheet for Stmicroelectronics STGD10NC60SDT4 to view detailed technical specifications.
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