
N-channel Insulated Gate Bipolar Transistor (IGBT) for surface mounting in a DPAK (TO-252) package. Features a 600V collector-emitter voltage and 18A continuous collector current, with a maximum power dissipation of 60000mW. This single IGBT chip offers a typical collector-emitter saturation voltage of 1.45V and operates across a temperature range of -55°C to 150°C. The 3-pin DPAK package has gull-wing leads and a tab for enhanced thermal performance.
Stmicroelectronics STGD10NC60SDT4 technical specifications.
| Package Family Name | TO-252 |
| Package/Case | DPAK |
| Package Description | Deca Watt Package |
| Lead Shape | Gull-wing |
| Pin Count | 3 |
| PCB | 2 |
| Tab | Tab |
| Package Length (mm) | 6.6(Max) |
| Package Width (mm) | 6.2(Max) |
| Package Height (mm) | 2.4(Max) |
| Seated Plane Height (mm) | 2.63(Max) |
| Pin Pitch (mm) | 2.3(Max) |
| Package Material | Plastic |
| Mounting | Surface Mount |
| Jedec | TO-252AA |
| Channel Type | N |
| Configuration | Single |
| Maximum Collector-Emitter Voltage | 600V |
| Maximum Gate Emitter Voltage | ±20V |
| Maximum Continuous Collector Current | 18A |
| Maximum Power Dissipation | 60000mW |
| Typical Collector Emitter Saturation Voltage | 1.45V |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
| Cage Code | SCR76 |
| EU RoHS | Yes with Exemption |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
| RoHS Versions | 2011/65/EU, 2015/863 |
Download the complete datasheet for Stmicroelectronics STGD10NC60SDT4 to view detailed technical specifications.
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