The STGD20N40LZ is an insulated gate bipolar transistor with a collector-emitter breakdown voltage of 390V and a maximum collector current of 25A. It is packaged in a DPAK package with a height of 2.4mm and a length of 6.6mm. The transistor is designed to operate over a temperature range of -55°C to 175°C and has a maximum power dissipation of 125W. It is RoHS compliant and available in quantities of 2500 per reel.
PackageDPAK
MountingSurface Mount
Power125W
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Technical Specifications
Stmicroelectronics STGD20N40LZ technical specifications.
General
| Package/Case | DPAK |
| Collector Base Voltage (VCBO) | 390V |
| Collector Emitter Breakdown Voltage | 390V |
| Collector Emitter Saturation Voltage | 1.5V |
| Collector-emitter Voltage-Max | 1.6V |
| Height | 2.4mm |
| Length | 6.6mm |
| Max Breakdown Voltage | 390V |
| Max Collector Current | 25A |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 125W |
| Mount | Surface Mount |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Power Dissipation | 125W |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Series | PowerMESH™ |
| Width | 6.2mm |
Compliance
| RoHS | Compliant |
Datasheet
Stmicroelectronics STGD20N40LZ Datasheet
Download the complete datasheet for Stmicroelectronics STGD20N40LZ to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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