N-channel IGBT for efficient power switching. Features 600V collector-emitter breakdown voltage and 3A continuous collector current. Offers a low 1.5V collector-emitter saturation voltage. Designed for surface mounting in a TO-252-3 package. Operates across a wide temperature range from -65°C to 150°C with 48W maximum power dissipation. RoHS compliant and lead-free.
PackageTO-252-3
Current Rating3A
MountingSurface Mount
Power48W
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Technical Specifications
Stmicroelectronics STGD3NB60SDT4 technical specifications.
General
Package/Case
TO-252-3
Collector Emitter Breakdown Voltage
600V
Collector Emitter Saturation Voltage
1.5V
Collector Emitter Voltage (VCEO)
600V
Collector-emitter Voltage-Max
1.5V
Current Rating
3A
Input Type
STANDARD
Lead Free
Lead Free
Max Breakdown Voltage
600V
Max Collector Current
6A
Max Operating Temperature
150°C
Min Operating Temperature
-65°C
Max Power Dissipation
48W
Mount
Surface Mount
Package Quantity
1
Packaging
Tape and Reel
Power Dissipation
48W
Radiation Hardening
No
Reverse Recovery Time
1.7us
RoHS Compliant
Yes
Series
PowerMESH™
Turn-Off Delay Time
1us
Turn-On Delay Time
125us
DC Rated Voltage
600V
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STGD3NB60SDT4 Datasheet
Download the complete datasheet for Stmicroelectronics STGD3NB60SDT4 to view detailed technical specifications.
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