N-channel IGBT for efficient power switching. Features 600V collector-emitter breakdown voltage and 3A continuous collector current. Offers a low 1.5V collector-emitter saturation voltage. Designed for surface mounting in a TO-252-3 package. Operates across a wide temperature range from -65°C to 150°C with 48W maximum power dissipation. RoHS compliant and lead-free.
PackageTO-252-3
Current Rating3A
MountingSurface Mount
Power48W
Quick Jump:
Technical Specifications
Stmicroelectronics STGD3NB60SDT4 technical specifications.
General
| Package/Case | TO-252-3 |
| Collector Emitter Breakdown Voltage | 600V |
| Collector Emitter Saturation Voltage | 1.5V |
| Collector Emitter Voltage (VCEO) | 600V |
| Collector-emitter Voltage-Max | 1.5V |
| Current Rating | 3A |
| Input Type | STANDARD |
| Lead Free | Lead Free |
| Max Breakdown Voltage | 600V |
| Max Collector Current | 6A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 48W |
| Mount | Surface Mount |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Power Dissipation | 48W |
| Radiation Hardening | No |
| Reverse Recovery Time | 1.7us |
| RoHS Compliant | Yes |
| Series | PowerMESH™ |
| Turn-Off Delay Time | 1us |
| Turn-On Delay Time | 125us |
| DC Rated Voltage | 600V |
Compliance
| RoHS | Compliant |
Datasheet
Stmicroelectronics STGD3NB60SDT4 Datasheet
Download the complete datasheet for Stmicroelectronics STGD3NB60SDT4 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
