N-channel Insulated Gate Bipolar Transistor (IGBT) for surface mount applications. Features 1200V collector-emitter breakdown voltage and 5A continuous collector current. Offers a maximum collector current of 10A and a maximum power dissipation of 75W. Operates within a temperature range of -55°C to 150°C. Packaged in DPAK with tape and reel for 2500 units.
PackageDPAK
Current Rating5A
MountingSurface Mount
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Technical Specifications
Stmicroelectronics STGD5NB120SZT4 technical specifications.
General
| Package/Case | DPAK |
| Collector Emitter Breakdown Voltage | 1.2kV |
| Collector Emitter Saturation Voltage | 2V |
| Collector Emitter Voltage (VCEO) | 1.2kV |
| Collector-emitter Voltage-Max | 2V |
| Continuous Collector Current | 5A |
| Current Rating | 5A |
| Height | 2.4mm |
| Input Type | STANDARD |
| Lead Free | Lead Free |
| Length | 6.6mm |
| Max Breakdown Voltage | 1.2kV |
| Max Collector Current | 10A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 75W |
| Mount | Surface Mount |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | PowerMESH™ |
| Turn-Off Delay Time | 12.1us |
| Turn-On Delay Time | 690ns |
| DC Rated Voltage | 1.2kV |
| Weight | 0.139332oz |
| Width | 6.2mm |
Compliance
| RoHS | Compliant |
Datasheet
Stmicroelectronics STGD5NB120SZT4 Datasheet
Download the complete datasheet for Stmicroelectronics STGD5NB120SZT4 to view detailed technical specifications.
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