The STGD7NB120ST4 is a single insulated gate bipolar transistor with a maximum collector-emitter voltage of 1200V and a maximum continuous collector current of 10A. It has a typical collector-emitter saturation voltage of 1.7V and a maximum power dissipation of 55W. The device is packaged in a TO-251 IPAK with a maximum package length of 6.6mm and a maximum package width of 2.4mm. It is designed for through-hole mounting and has an operating temperature range of -65°C to 150°C.
PackageIPAK
MountingThrough Hole
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Technical Specifications
Stmicroelectronics STGD7NB120ST4 technical specifications.
General
| Package Family Name | TO-251 |
| Package/Case | IPAK |
| Lead Shape | Through Hole |
| Pin Count | 3 |
| PCB | 3 |
| Tab | Tab |
| Package Length (mm) | 6.6(Max) |
| Package Width (mm) | 2.4(Max) |
| Package Height (mm) | 6.2(Max) |
| Seated Plane Height (mm) | 8.4(Max) |
| Pin Pitch (mm) | 2.3(Max) |
| Package Material | Plastic |
| Mounting | Through Hole |
| Channel Type | N |
| Configuration | Single |
| Maximum Collector-Emitter Voltage | 1200V |
| Maximum Gate Emitter Voltage | ±20V |
| Maximum Continuous Collector Current | 10A |
| Maximum Power Dissipation | 55000mW |
| Typical Collector Emitter Saturation Voltage | 1.7V |
| Min Operating Temperature | -65°C |
| Max Operating Temperature | 150°C |
Compliance
| Cage Code | SCR76 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
| RoHS Versions | 2002/95/EC |
Datasheet
Stmicroelectronics STGD7NB120ST4 Datasheet
Download the complete datasheet for Stmicroelectronics STGD7NB120ST4 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.