Insulated Gate Bipolar Transistor (IGBT) featuring a 600V Collector-Emitter Breakdown Voltage and 15A Max Collector Current. This surface mount device, housed in a DPAK package, offers a low Collector-Emitter Voltage of 2.75V and a Max Power Dissipation of 62W. Designed for ruggedness with a short-circuit rating, it operates within a temperature range of -55°C to 150°C. Key electrical characteristics include a 17ns Turn-On Delay Time and a 72ns Turn-Off Delay Time, with a Reverse Recovery Time of 23.5ns. This RoHS compliant, lead-free component is supplied on tape and reel.
PackageDPAK
MountingSurface Mount
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Technical Specifications
Stmicroelectronics STGD8NC60KDT4 technical specifications.
General
| Package/Case | DPAK |
| Collector Emitter Breakdown Voltage | 600V |
| Collector Emitter Voltage (VCEO) | 600V |
| Collector-emitter Voltage-Max | 2.75V |
| Height | 2.4mm |
| Input Type | STANDARD |
| Lead Free | Lead Free |
| Length | 6.6mm |
| Max Breakdown Voltage | 600V |
| Max Collector Current | 15A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 62W |
| Mount | Surface Mount |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Radiation Hardening | No |
| Reverse Recovery Time | 23.5ns |
| RoHS Compliant | Yes |
| Series | PowerMESH™ |
| Turn-Off Delay Time | 72ns |
| Turn-On Delay Time | 17ns |
| Weight | 0.012346oz |
| Width | 6.2mm |
Compliance
| RoHS | Compliant |
Datasheet
Stmicroelectronics STGD8NC60KDT4 Datasheet
Download the complete datasheet for Stmicroelectronics STGD8NC60KDT4 to view detailed technical specifications.
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