N-channel Insulated Gate Bipolar Transistor (IGBT) chip featuring 600V collector-emitter voltage and 9A continuous collector current. This single IGBT is housed in a TO-220FP package with 3 pins and a tab, designed for through-hole mounting. It offers a maximum power dissipation of 30000mW and operates across a temperature range of -40°C to 175°C. The package dimensions are 10.4mm (L) x 4.6mm (W) x 16.4mm (H).
PackageTO-220FP
MountingThrough Hole
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Technical Specifications
Stmicroelectronics STGF10HF60KD technical specifications.
General
Basic Package Type
Through Hole
Package Family Name
TO-220
Package/Case
TO-220FP
Package Description
Transistor Outline Package Fullpak
Lead Shape
Through Hole
Pin Count
3
PCB
3
Tab
Tab
Package Length (mm)
10.4(Max)
Package Width (mm)
4.6(Max)
Package Height (mm)
16.4(Max)
Seated Plane Height (mm)
20(Max)
Pin Pitch (mm)
2.7(Max)
Package Weight (g)
2.04
Package Material
Plastic
Mounting
Through Hole
Channel Type
N
Configuration
Single
Maximum Collector-Emitter Voltage
600V
Maximum Gate Emitter Voltage
±20V
Maximum Continuous Collector Current
9A
Maximum Power Dissipation
30000mW
Typical Collector Emitter Saturation Voltage
2V
Min Operating Temperature
-40°C
Max Operating Temperature
175°C
Compliance
Cage Code
SCR76
EU RoHS
Yes with Exemption
Schedule B
8541290080
ECCN
EAR99
Automotive
Yes
AEC Qualified
Yes
RoHS Versions
2011/65/EU, 2015/863
Datasheet
Stmicroelectronics STGF10HF60KD Datasheet
Download the complete datasheet for Stmicroelectronics STGF10HF60KD to view detailed technical specifications.
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