600V low drop IGBT transistor featuring a 10A current rating and 600V collector-emitter breakdown voltage. This device offers a 1.8V collector-emitter saturation voltage and a 37ns reverse recovery time, ideal for applications requiring efficient switching. Housed in a TO-220-3 through-hole package, it operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 25W. RoHS compliant and lead-free.
PackageTO-220-3
Current Rating10A
MountingThrough Hole
Power25W
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Technical Specifications
Stmicroelectronics STGF10NB60SD technical specifications.
General
| Package/Case | TO-220-3 |
| Collector Emitter Breakdown Voltage | 600V |
| Collector Emitter Saturation Voltage | 1.8V |
| Collector Emitter Voltage (VCEO) | 600V |
| Collector-emitter Voltage-Max | 1.75V |
| Continuous Drain Current (ID) | 20A |
| Current Rating | 10A |
| Drain to Source Voltage (Vdss) | 600V |
| Height | 20mm |
| Input Type | STANDARD |
| Lead Free | Lead Free |
| Length | 10.4mm |
| Max Breakdown Voltage | 600V |
| Max Collector Current | 23A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 25W |
| Mount | Through Hole |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Power Dissipation | 25W |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| Reverse Recovery Time | 37ns |
| RoHS Compliant | Yes |
| Series | PowerMESH™ |
| DC Rated Voltage | 600V |
| Width | 4.6mm |
Compliance
| RoHS | Compliant |
Datasheet
Stmicroelectronics STGF10NB60SD Datasheet
Download the complete datasheet for Stmicroelectronics STGF10NB60SD to view detailed technical specifications.
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