600V low drop IGBT transistor featuring a 10A current rating and 600V collector-emitter breakdown voltage. This device offers a 1.8V collector-emitter saturation voltage and a 37ns reverse recovery time, ideal for applications requiring efficient switching. Housed in a TO-220-3 through-hole package, it operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 25W. RoHS compliant and lead-free.
PackageTO-220-3
Current Rating10A
MountingThrough Hole
Power25W
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Technical Specifications
Stmicroelectronics STGF10NB60SD technical specifications.
General
Package/Case
TO-220-3
Collector Emitter Breakdown Voltage
600V
Collector Emitter Saturation Voltage
1.8V
Collector Emitter Voltage (VCEO)
600V
Collector-emitter Voltage-Max
1.75V
Continuous Drain Current (ID)
20A
Current Rating
10A
Drain to Source Voltage (Vdss)
600V
Height
20mm
Input Type
STANDARD
Lead Free
Lead Free
Length
10.4mm
Max Breakdown Voltage
600V
Max Collector Current
23A
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
25W
Mount
Through Hole
Package Quantity
50
Packaging
Rail/Tube
Power Dissipation
25W
Radiation Hardening
No
Reach SVHC Compliant
No
Reverse Recovery Time
37ns
RoHS Compliant
Yes
Series
PowerMESH™
DC Rated Voltage
600V
Width
4.6mm
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STGF10NB60SD Datasheet
Download the complete datasheet for Stmicroelectronics STGF10NB60SD to view detailed technical specifications.
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