N-channel Insulated Gate Bipolar Transistor (IGBT) chip designed for through-hole mounting. Features a 600V collector-emitter voltage and 10A continuous collector current. Maximum power dissipation is 25000mW with a typical collector-emitter saturation voltage of 1.45V. Packaged in a TO-220FP configuration with 3 pins and a tab, offering a wide operating temperature range from -55°C to 150°C.
PackageTO-220FP
MountingThrough Hole
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Technical Specifications
Stmicroelectronics STGF10NC60SD technical specifications.
General
Basic Package Type
Through Hole
Package Family Name
TO-220
Package/Case
TO-220FP
Package Description
Transistor Outline Package Fullpak
Lead Shape
Through Hole
Pin Count
3
PCB
3
Tab
Tab
Package Length (mm)
10.4(Max)
Package Width (mm)
4.6(Max)
Package Height (mm)
16.4(Max)
Seated Plane Height (mm)
20(Max)
Pin Pitch (mm)
2.7(Max)
Package Weight (g)
2.04
Package Material
Plastic
Mounting
Through Hole
Channel Type
N
Configuration
Single
Maximum Collector-Emitter Voltage
600V
Maximum Gate Emitter Voltage
±20V
Maximum Continuous Collector Current
10A
Maximum Power Dissipation
25000mW
Typical Collector Emitter Saturation Voltage
1.45V
Min Operating Temperature
-55°C
Max Operating Temperature
150°C
Compliance
Cage Code
SCR76
EU RoHS
Yes with Exemption
Schedule B
8541290080
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
Radiation Hardening
No
RoHS Versions
2011/65/EU
Datasheet
Stmicroelectronics STGF10NC60SD Datasheet
Download the complete datasheet for Stmicroelectronics STGF10NC60SD to view detailed technical specifications.
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