N-channel Insulated Gate Bipolar Transistor (IGBT) chip designed for through-hole mounting. Features a 600V collector-emitter voltage and 11A continuous collector current. Offers a maximum power dissipation of 33000mW and a typical collector-emitter saturation voltage of 2.1V. Encased in a TO-220FP package with 3 pins and a tab, operating within a temperature range of -40°C to 175°C.
PackageTO-220FP
MountingThrough Hole
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Technical Specifications
Stmicroelectronics STGF14HF60KD technical specifications.
General
| Basic Package Type | Through Hole |
| Package Family Name | TO-220 |
| Package/Case | TO-220FP |
| Package Description | Transistor Outline Package Fullpak |
| Lead Shape | Through Hole |
| Pin Count | 3 |
| PCB | 3 |
| Tab | Tab |
| Package Length (mm) | 10.4(Max) |
| Package Width (mm) | 4.6(Max) |
| Package Height (mm) | 16.4(Max) |
| Seated Plane Height (mm) | 20(Max) |
| Pin Pitch (mm) | 2.7(Max) |
| Package Weight (g) | 2.04 |
| Package Material | Plastic |
| Mounting | Through Hole |
| Channel Type | N |
| Configuration | Single |
| Maximum Collector-Emitter Voltage | 600V |
| Maximum Gate Emitter Voltage | ±20V |
| Maximum Continuous Collector Current | 11A |
| Maximum Power Dissipation | 33000mW |
| Typical Collector Emitter Saturation Voltage | 2.1V |
| Min Operating Temperature | -40°C |
| Max Operating Temperature | 175°C |
Compliance
| Cage Code | SCR76 |
| EU RoHS | Yes |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| RoHS Versions | 2002/95/EC |
Datasheet
Stmicroelectronics STGF14HF60KD Datasheet
Download the complete datasheet for Stmicroelectronics STGF14HF60KD to view detailed technical specifications.
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