Very fast Insulated Gate Bipolar Transistor (IGBT) with Ultrafast diode, featuring a 600V Collector Emitter Breakdown Voltage and 16A Continuous Drain Current. This through-hole component offers a 1.8V Collector Emitter Saturation Voltage and 35W Power Dissipation, operating from -55°C to 150°C. Key performance characteristics include a 25ns Turn-On Delay Time and 31ns Reverse Recovery Time. Packaged in TO-220-3, this RoHS compliant device is designed for high-speed switching applications.
PackageTO-220-3
Current Rating9A
MountingThrough Hole
Power35W
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Technical Specifications
Stmicroelectronics STGF19NC60HD technical specifications.
General
| Package/Case | TO-220-3 |
| Collector Emitter Breakdown Voltage | 600V |
| Collector Emitter Saturation Voltage | 1.8V |
| Collector Emitter Voltage (VCEO) | 600V |
| Collector-emitter Voltage-Max | 2.5V |
| Continuous Drain Current (ID) | 16A |
| Current Rating | 9A |
| Drain to Source Voltage (Vdss) | 600V |
| Height | 16.4mm |
| Input Type | STANDARD |
| Lead Free | Lead Free |
| Length | 10.4mm |
| Max Collector Current | 16A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 32W |
| Mount | Through Hole |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Power Dissipation | 35W |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| Reverse Recovery Time | 31ns |
| RoHS Compliant | Yes |
| Series | PowerMESH™ |
| Turn-Off Delay Time | 97ns |
| Turn-On Delay Time | 25ns |
| DC Rated Voltage | 600V |
| Width | 4.6mm |
Compliance
| RoHS | Compliant |
Datasheet
Stmicroelectronics STGF19NC60HD Datasheet
Download the complete datasheet for Stmicroelectronics STGF19NC60HD to view detailed technical specifications.
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