The STGF19NC60WD is an insulated gate bipolar transistor with a collector-emitter breakdown voltage of 600V and a maximum collector current of 14A. It has a maximum power dissipation of 32W and is packaged in a TO-220-3 package with a through-hole mount. The transistor operates within a temperature range of -55°C to 150°C and is RoHS compliant. It is not radiation hardened and is not compliant with Reach SVHC regulations.
PackageTO-220-3
MountingThrough Hole
Power32W
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Technical Specifications
Stmicroelectronics STGF19NC60WD technical specifications.
General
| Package/Case | TO-220-3 |
| Collector Emitter Breakdown Voltage | 600V |
| Collector Emitter Saturation Voltage | 2.5V |
| Collector Emitter Voltage (VCEO) | 600V |
| Collector-emitter Voltage-Max | 2.5V |
| Input Type | STANDARD |
| Max Breakdown Voltage | 600V |
| Max Collector Current | 14A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 32W |
| Mount | Through Hole |
| Package Quantity | 1 |
| Packaging | Rail/Tube |
| Power Dissipation | 32W |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| Reverse Recovery Time | 32ns |
| RoHS Compliant | Yes |
| Series | PowerMESH™ |
| Termination | Through Hole |
Compliance
| RoHS | Compliant |
Datasheet
Stmicroelectronics STGF19NC60WD Datasheet
Download the complete datasheet for Stmicroelectronics STGF19NC60WD to view detailed technical specifications.
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