N-channel Insulated Gate Bipolar Transistor (IGBT) chip featuring a 1200V collector-emitter breakdown voltage and a 6A maximum collector current. This through-hole component offers a 25W maximum power dissipation and a low 2.8V collector-emitter saturation voltage. Designed for standard input, it operates across a -55°C to 150°C temperature range and is housed in a TO-220-3 package. The device boasts a 51ns reverse recovery time and is RoHS compliant.
PackageTO-220-3
Current Rating3A
MountingThrough Hole
Power25W
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Technical Specifications
Stmicroelectronics STGF3NC120HD technical specifications.
General
| Package/Case | TO-220-3 |
| Collector Emitter Breakdown Voltage | 1.2kV |
| Collector Emitter Saturation Voltage | 2.8V |
| Collector Emitter Voltage (VCEO) | 1.2kV |
| Collector-emitter Voltage-Max | 2.8V |
| Current Rating | 3A |
| Height | 16.4mm |
| Input Type | STANDARD |
| Lead Free | Lead Free |
| Length | 10.4mm |
| Max Collector Current | 6A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 25W |
| Mount | Through Hole |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Power Dissipation | 25W |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| Reverse Recovery Time | 51ns |
| RoHS Compliant | Yes |
| Series | PowerMESH™ |
| DC Rated Voltage | 1.2kV |
| Width | 4.6mm |
Compliance
| RoHS | Compliant |
Datasheet
Stmicroelectronics STGF3NC120HD Datasheet
Download the complete datasheet for Stmicroelectronics STGF3NC120HD to view detailed technical specifications.
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