The STGF8NC60KD is a 600V insulated gate bipolar transistor (IGBT) with a maximum collector current of 7A. It is packaged in a TO-220-3 flange mount package and is suitable for through hole mounting. The device operates over a temperature range of -55°C to 150°C and is RoHS compliant. It is part of the PowerMESH series from STMicroelectronics.
PackageTO-220-3
MountingThrough Hole
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Technical Specifications
Stmicroelectronics STGF8NC60KD technical specifications.
General
| Package/Case | TO-220-3 |
| Collector Emitter Breakdown Voltage | 600V |
| Collector Emitter Voltage (VCEO) | 600V |
| Collector-emitter Voltage-Max | 2.75V |
| Input Type | STANDARD |
| Max Collector Current | 7A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 24W |
| Mount | Through Hole |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Radiation Hardening | No |
| Reverse Recovery Time | 23.5ns |
| RoHS Compliant | Yes |
| Series | PowerMESH™ |
Compliance
| RoHS | Compliant |
Datasheet
Stmicroelectronics STGF8NC60KD Datasheet
Download the complete datasheet for Stmicroelectronics STGF8NC60KD to view detailed technical specifications.
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