Insulated Gate Bipolar Transistor (IGBT) with 600V Collector-Emitter Breakdown Voltage and 600V Collector Emitter Voltage. Features a 1.9V Collector Emitter Saturation Voltage and 7A Continuous Collector Current, with a 20A Current Rating. This TO-220 packaged device offers a maximum power dissipation of 65W and operates within a temperature range of -55°C to 150°C. It includes a 22ns reverse recovery time and 14.2ns turn-on delay time.
Stmicroelectronics STGP10NC60HD technical specifications.
| Package/Case | TO-220 |
| Collector Emitter Breakdown Voltage | 600V |
| Collector Emitter Saturation Voltage | 1.9V |
| Collector Emitter Voltage (VCEO) | 600V |
| Collector-emitter Voltage-Max | 2.5V |
| Continuous Collector Current | 7A |
| Current Rating | 20A |
| Height | 9.15mm |
| Input Type | STANDARD |
| Lead Free | Lead Free |
| Length | 10.4mm |
| Max Collector Current | 20A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 65W |
| Mount | Through Hole |
| Package Quantity | 1000 |
| Packaging | Rail/Tube |
| Radiation Hardening | No |
| Reverse Recovery Time | 22ns |
| RoHS Compliant | Yes |
| Series | PowerMESH™ |
| Turn-Off Delay Time | 72ns |
| Turn-On Delay Time | 14.2ns |
| DC Rated Voltage | 600V |
| Weight | 0.012346oz |
| Width | 4.6mm |
| RoHS | Compliant |
Download the complete datasheet for Stmicroelectronics STGP10NC60HD to view detailed technical specifications.
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