Insulated Gate Bipolar Transistor (IGBT) with 600V Collector-Emitter Breakdown Voltage and 600V Collector Emitter Voltage. Features a 1.9V Collector Emitter Saturation Voltage and 7A Continuous Collector Current, with a 20A Current Rating. This TO-220 packaged device offers a maximum power dissipation of 65W and operates within a temperature range of -55°C to 150°C. It includes a 22ns reverse recovery time and 14.2ns turn-on delay time.
PackageTO-220
Current Rating20A
MountingThrough Hole
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Technical Specifications
Stmicroelectronics STGP10NC60HD technical specifications.
General
Package/Case
TO-220
Collector Emitter Breakdown Voltage
600V
Collector Emitter Saturation Voltage
1.9V
Collector Emitter Voltage (VCEO)
600V
Collector-emitter Voltage-Max
2.5V
Continuous Collector Current
7A
Current Rating
20A
Height
9.15mm
Input Type
STANDARD
Lead Free
Lead Free
Length
10.4mm
Max Collector Current
20A
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
65W
Mount
Through Hole
Package Quantity
1000
Packaging
Rail/Tube
Radiation Hardening
No
Reverse Recovery Time
22ns
RoHS Compliant
Yes
Series
PowerMESH™
Turn-Off Delay Time
72ns
Turn-On Delay Time
14.2ns
DC Rated Voltage
600V
Weight
0.012346oz
Width
4.6mm
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STGP10NC60HD Datasheet
Download the complete datasheet for Stmicroelectronics STGP10NC60HD to view detailed technical specifications.
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