N-channel Insulated Gate Bipolar Transistor (IGBT) for through-hole mounting in a TO-220AB package. Features a 600V collector-emitter voltage, 21A continuous collector current, and 62.5W maximum power dissipation. This single IGBT offers a ±20V gate-emitter voltage and a typical collector-emitter saturation voltage of 1.45V. Operates across a wide temperature range from -55°C to 150°C.
PackageTO-220AB
MountingThrough Hole
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Technical Specifications
Stmicroelectronics STGP10NC60S technical specifications.
General
Basic Package Type
Through Hole
Package Family Name
TO-220
Package/Case
TO-220AB
Package Description
Transistor Outline Package
Lead Shape
Through Hole
Pin Count
3
PCB
3
Tab
Tab
Package Length (mm)
10.4(Max)
Package Width (mm)
4.6(Max)
Package Height (mm)
9.15(Max)
Seated Plane Height (mm)
19.68(Max)
Pin Pitch (mm)
2.7(Max)
Package Weight (g)
1.9
Package Material
Plastic
Mounting
Through Hole
Jedec
TO-220AB
Channel Type
N
Configuration
Single
Maximum Collector-Emitter Voltage
600V
Maximum Gate Emitter Voltage
±20V
Maximum Continuous Collector Current
21A
Maximum Power Dissipation
62500mW
Typical Collector Emitter Saturation Voltage
1.45V
Min Operating Temperature
-55°C
Max Operating Temperature
150°C
Compliance
Cage Code
SCR76
EU RoHS
Yes with Exemption
Schedule B
8541290080
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
Radiation Hardening
No
RoHS Versions
2011/65/EU
Datasheet
Stmicroelectronics STGP10NC60S Datasheet
Download the complete datasheet for Stmicroelectronics STGP10NC60S to view detailed technical specifications.
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