The STGP30V60F is an insulated gate bipolar transistor with a collector emitter breakdown voltage of 600V and a maximum collector current of 60A. It is packaged in a TO-220-3 case and is designed for through hole mounting. The device has a maximum operating temperature of 175°C and a minimum operating temperature of -55°C. It is RoHS compliant and suitable for use in a variety of applications.
PackageTO-220-3
MountingThrough Hole
Power260W
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Technical Specifications
Stmicroelectronics STGP30V60F technical specifications.
General
| Package/Case | TO-220-3 |
| Collector Emitter Breakdown Voltage | 600V |
| Collector Emitter Saturation Voltage | 2.3V |
| Collector-emitter Voltage-Max | 2.3V |
| Height | 15.75mm |
| Input Type | STANDARD |
| Length | 10.4mm |
| Max Collector Current | 60A |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 260W |
| Mount | Through Hole |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Power Dissipation | 260W |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Width | 4.6mm |
Compliance
| RoHS | Compliant |
Datasheet
Stmicroelectronics STGP30V60F Datasheet
Download the complete datasheet for Stmicroelectronics STGP30V60F to view detailed technical specifications.
No datasheet is available for this part.