The STGP8NC60KD is a 600V insulated gate bipolar transistor (IGBT) with a maximum collector current of 7A. It is packaged in a TO-220-3 case and is suitable for through-hole mounting. The device has a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It is compliant with RoHS regulations and is lead-free.
PackageTO-220-3
MountingThrough Hole
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Technical Specifications
Stmicroelectronics STGP8NC60KD technical specifications.
General
| Package/Case | TO-220-3 |
| Collector Emitter Breakdown Voltage | 600V |
| Collector Emitter Voltage (VCEO) | 600V |
| Collector-emitter Voltage-Max | 2.75V |
| Height | 9.15mm |
| Input Type | STANDARD |
| Lead Free | Lead Free |
| Length | 10.4mm |
| Max Collector Current | 7A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 65W |
| Mount | Through Hole |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Radiation Hardening | No |
| Reverse Recovery Time | 23.5ns |
| RoHS Compliant | Yes |
| Series | PowerMESH™ |
| Width | 4.6mm |
Compliance
| RoHS | Compliant |
Datasheet
Stmicroelectronics STGP8NC60KD Datasheet
Download the complete datasheet for Stmicroelectronics STGP8NC60KD to view detailed technical specifications.
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