The STGPL6NC60D is a 600V insulated gate bipolar transistor with a maximum collector current of 42A and a maximum power dissipation of 56W. It is packaged in a TO-220-3 flange mount package and is suitable for through hole mounting. The transistor operates over a temperature range of -55°C to 150°C and is RoHS compliant. The device is not radiation hardened and has a reverse recovery time of 50ns.
PackageTO-220-3
MountingThrough Hole
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Technical Specifications
Stmicroelectronics STGPL6NC60D technical specifications.
General
| Package/Case | TO-220-3 |
| Collector Emitter Breakdown Voltage | 600V |
| Collector Emitter Voltage (VCEO) | 600V |
| Collector-emitter Voltage-Max | 2.9V |
| Input Type | STANDARD |
| Max Breakdown Voltage | 600V |
| Max Collector Current | 42A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 56W |
| Mount | Through Hole |
| Package Quantity | 1 |
| Packaging | Rail/Tube |
| Radiation Hardening | No |
| Reverse Recovery Time | 50ns |
| RoHS Compliant | Yes |
| Series | PowerMESH™ |
Compliance
| RoHS | Compliant |
Datasheet
Stmicroelectronics STGPL6NC60D Datasheet
Download the complete datasheet for Stmicroelectronics STGPL6NC60D to view detailed technical specifications.
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