N-Channel Insulated Gate Bipolar Transistor (IGBT) featuring a 600V collector-emitter breakdown voltage and a maximum collector current of 42A. This device offers a low collector-emitter saturation voltage of 2.5V and a maximum power dissipation of 125W. Packaged in a TO-247 through-hole mount, it operates across a temperature range of -55°C to 150°C. RoHS compliant with a reverse recovery time of 31ns and turn-on/off delay times of 25ns and 90ns respectively.
PackageTO-247
MountingThrough Hole
Power125W
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Technical Specifications
Stmicroelectronics STGW19NC60WD technical specifications.
General
Package/Case
TO-247
Collector Emitter Breakdown Voltage
600V
Collector Emitter Saturation Voltage
2.5V
Collector Emitter Voltage (VCEO)
600V
Collector-emitter Voltage-Max
2.5V
Height
20.15mm
Input Type
STANDARD
Lead Free
Lead Free
Length
15.75mm
Max Collector Current
42A
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
125W
Mount
Through Hole
Package Quantity
30
Packaging
Rail/Tube
Power Dissipation
125W
Radiation Hardening
No
Reach SVHC Compliant
No
Reverse Recovery Time
31ns
RoHS Compliant
Yes
Series
PowerMESH™
Turn-Off Delay Time
90ns
Turn-On Delay Time
25ns
Width
5.15mm
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STGW19NC60WD Datasheet
Download the complete datasheet for Stmicroelectronics STGW19NC60WD to view detailed technical specifications.
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