N-Channel Insulated Gate Bipolar Transistor (IGBT) featuring a 600V collector-emitter breakdown voltage and a maximum collector current of 42A. This device offers a low collector-emitter saturation voltage of 2.5V and a maximum power dissipation of 125W. Packaged in a TO-247 through-hole mount, it operates across a temperature range of -55°C to 150°C. RoHS compliant with a reverse recovery time of 31ns and turn-on/off delay times of 25ns and 90ns respectively.
PackageTO-247
MountingThrough Hole
Power125W
Quick Jump:
Technical Specifications
Stmicroelectronics STGW19NC60WD technical specifications.
General
| Package/Case | TO-247 |
| Collector Emitter Breakdown Voltage | 600V |
| Collector Emitter Saturation Voltage | 2.5V |
| Collector Emitter Voltage (VCEO) | 600V |
| Collector-emitter Voltage-Max | 2.5V |
| Height | 20.15mm |
| Input Type | STANDARD |
| Lead Free | Lead Free |
| Length | 15.75mm |
| Max Collector Current | 42A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 125W |
| Mount | Through Hole |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Power Dissipation | 125W |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| Reverse Recovery Time | 31ns |
| RoHS Compliant | Yes |
| Series | PowerMESH™ |
| Turn-Off Delay Time | 90ns |
| Turn-On Delay Time | 25ns |
| Width | 5.15mm |
Compliance
| RoHS | Compliant |
Datasheet
Stmicroelectronics STGW19NC60WD Datasheet
Download the complete datasheet for Stmicroelectronics STGW19NC60WD to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
