The STGW30N120KD is a 1.2kV insulated gate bipolar transistor with a maximum collector current of 60A and a maximum power dissipation of 220W. It is packaged in a TO-247-3 package and is designed for through hole mounting. The transistor has a maximum operating temperature of 125°C and a minimum operating temperature of -55°C. It is RoHS compliant and lead free.
PackageTO-247-3
MountingThrough Hole
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Technical Specifications
Stmicroelectronics STGW30N120KD technical specifications.
General
| Package/Case | TO-247-3 |
| Collector Emitter Breakdown Voltage | 1.2kV |
| Collector Emitter Voltage (VCEO) | 1.2kV |
| Collector-emitter Voltage-Max | 3.85V |
| Input Type | STANDARD |
| Lead Free | Lead Free |
| Max Collector Current | 60A |
| Max Operating Temperature | 125°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 220W |
| Mount | Through Hole |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Radiation Hardening | No |
| Reverse Recovery Time | 84ns |
| RoHS Compliant | Yes |
| Series | PowerMESH™ |
Compliance
| RoHS | Compliant |
Datasheet
Stmicroelectronics STGW30N120KD Datasheet
Download the complete datasheet for Stmicroelectronics STGW30N120KD to view detailed technical specifications.
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