Ultra-fast Insulated Gate Bipolar Transistor (IGBT) with a 600V collector-emitter breakdown voltage and 30A continuous drain current. Features a maximum collector current of 60A and a low collector-emitter saturation voltage of 2.5V. Operates across a wide temperature range from -55°C to 150°C with a maximum power dissipation of 200W. Packaged in a TO-247-3 through-hole mount, this RoHS compliant component offers fast switching speeds with turn-on delay time of 29.5ns and turn-off delay time of 118ns.
PackageTO-247-3
Current Rating60A
MountingThrough Hole
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Technical Specifications
Stmicroelectronics STGW30NC60W technical specifications.
General
Package/Case
TO-247-3
Collector Emitter Breakdown Voltage
600V
Collector Emitter Voltage (VCEO)
600V
Collector-emitter Voltage-Max
2.5V
Continuous Drain Current (ID)
30A
Current Rating
60A
Drain to Source Breakdown Voltage
600V
Drain to Source Resistance
2.5R
Gate to Source Voltage (Vgs)
20V
Height
20.15mm
Input Type
STANDARD
Lead Free
Lead Free
Length
15.75mm
Max Collector Current
60A
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
200W
Mount
Through Hole
Package Quantity
600
Packaging
Rail/Tube
Radiation Hardening
No
RoHS Compliant
Yes
Series
PowerMESH™
Turn-Off Delay Time
118ns
Turn-On Delay Time
29.5ns
DC Rated Voltage
600V
Weight
1.340411oz
Width
5.15mm
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STGW30NC60W Datasheet
Download the complete datasheet for Stmicroelectronics STGW30NC60W to view detailed technical specifications.
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