Ultra-fast Insulated Gate Bipolar Transistor (IGBT) with a 600V collector-emitter breakdown voltage and 30A continuous drain current. Features a maximum collector current of 60A and a low collector-emitter saturation voltage of 2.5V. Operates across a wide temperature range from -55°C to 150°C with a maximum power dissipation of 200W. Packaged in a TO-247-3 through-hole mount, this RoHS compliant component offers fast switching speeds with turn-on delay time of 29.5ns and turn-off delay time of 118ns.
PackageTO-247-3
Current Rating60A
MountingThrough Hole
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Technical Specifications
Stmicroelectronics STGW30NC60W technical specifications.
General
| Package/Case | TO-247-3 |
| Collector Emitter Breakdown Voltage | 600V |
| Collector Emitter Voltage (VCEO) | 600V |
| Collector-emitter Voltage-Max | 2.5V |
| Continuous Drain Current (ID) | 30A |
| Current Rating | 60A |
| Drain to Source Breakdown Voltage | 600V |
| Drain to Source Resistance | 2.5R |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 20.15mm |
| Input Type | STANDARD |
| Lead Free | Lead Free |
| Length | 15.75mm |
| Max Collector Current | 60A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 200W |
| Mount | Through Hole |
| Package Quantity | 600 |
| Packaging | Rail/Tube |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Series | PowerMESH™ |
| Turn-Off Delay Time | 118ns |
| Turn-On Delay Time | 29.5ns |
| DC Rated Voltage | 600V |
| Weight | 1.340411oz |
| Width | 5.15mm |
Compliance
| RoHS | Compliant |
Datasheet
Stmicroelectronics STGW30NC60W Datasheet
Download the complete datasheet for Stmicroelectronics STGW30NC60W to view detailed technical specifications.
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