N-channel Insulated Gate Bipolar Transistor (IGBT) chip designed for high-voltage applications. Features a 1300V collector-emitter voltage and 63A continuous collector current. Housed in a TO-247 package with 3 through-hole pins and a tab, offering a maximum power dissipation of 250,000mW. Operates across a wide temperature range from -55°C to 150°C with a typical collector-emitter saturation voltage of 2.1V.
PackageTO-247
MountingThrough Hole
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Technical Specifications
Stmicroelectronics STGW38IH130D technical specifications.
General
Basic Package Type
Through Hole
Package Family Name
TO-247
Package/Case
TO-247
Package Description
Transistor Outline Package
Lead Shape
Through Hole
Pin Count
3
PCB
3
Tab
Tab
Package Length (mm)
15.75(Max)
Package Width (mm)
5.15(Max)
Package Height (mm)
20.15(Max)
Seated Plane Height (mm)
24.45(Max)
Pin Pitch (mm)
5.45
Package Material
Plastic
Mounting
Through Hole
Jedec
TO-247
Channel Type
N
Configuration
Single
Maximum Collector-Emitter Voltage
1300V
Maximum Gate Emitter Voltage
±25V
Maximum Continuous Collector Current
63A
Maximum Power Dissipation
250000mW
Typical Collector Emitter Saturation Voltage
2.1V
Min Operating Temperature
-55°C
Max Operating Temperature
150°C
Compliance
Cage Code
SCR76
EU RoHS
Yes with Exemption
Schedule B
8541290080
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
Radiation Hardening
No
RoHS Versions
2011/65/EU, 2015/863
Datasheet
Stmicroelectronics STGW38IH130D Datasheet
Download the complete datasheet for Stmicroelectronics STGW38IH130D to view detailed technical specifications.
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