Very fast Insulated Gate Bipolar Transistor (IGBT) featuring 600V Collector-Emitter Breakdown Voltage and 40A Continuous Drain Current. This through-hole component offers a maximum collector current of 80A and a power dissipation of 250W. It operates within a temperature range of -55°C to 150°C and is packaged in a TO-247 case. Key electrical characteristics include a 1.8V Collector-Emitter Saturation Voltage and a 33ns Turn-On Delay Time.
PackageTO-247
Current Rating40A
MountingThrough Hole
Power250W
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Technical Specifications
Stmicroelectronics STGW39NC60VD technical specifications.
General
Package/Case
TO-247
Collector Emitter Breakdown Voltage
600V
Collector Emitter Saturation Voltage
1.8V
Collector Emitter Voltage (VCEO)
600V
Collector-emitter Voltage-Max
2.4V
Continuous Drain Current (ID)
40A
Current Rating
40A
Drain to Source Voltage (Vdss)
600V
Height
20.15mm
Input Type
STANDARD
Lead Free
Lead Free
Length
15.75mm
Max Collector Current
80A
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
250W
Mount
Through Hole
Package Quantity
30
Packaging
Rail/Tube
Power Dissipation
250W
Radiation Hardening
No
Reach SVHC Compliant
No
Reverse Recovery Time
45ns
RoHS Compliant
Yes
Series
PowerMESH™
Turn-Off Delay Time
178ns
Turn-On Delay Time
33ns
DC Rated Voltage
600V
Width
5.15mm
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STGW39NC60VD Datasheet
Download the complete datasheet for Stmicroelectronics STGW39NC60VD to view detailed technical specifications.
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