Insulated Gate Bipolar Transistor (IGBT) featuring 1200V collector-emitter breakdown voltage and 40A continuous collector current. Offers a low 2.8V collector-emitter saturation voltage and 84ns reverse recovery time. Designed for short-circuit ruggedness, this through-hole component is housed in a TO-247 package with a maximum power dissipation of 240W. Operating temperature range spans from -55°C to 125°C.
PackageTO-247
MountingThrough Hole
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Technical Specifications
Stmicroelectronics STGW40N120KD technical specifications.
General
| Package/Case | TO-247 |
| Collector Emitter Breakdown Voltage | 1.2kV |
| Collector Emitter Saturation Voltage | 2.8V |
| Collector Emitter Voltage (VCEO) | 1.2kV |
| Collector-emitter Voltage-Max | 3.85V |
| Height | 21.07mm |
| Input Type | STANDARD |
| Lead Free | Lead Free |
| Length | 16.02mm |
| Max Collector Current | 80A |
| Max Operating Temperature | 125°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 240W |
| Mount | Through Hole |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| Reverse Recovery Time | 84ns |
| RoHS Compliant | Yes |
| Series | PowerMESH™ |
| Turn-Off Delay Time | 420ns |
| Turn-On Delay Time | 48ns |
| Weight | 0.229281oz |
| Width | 5.15mm |
Compliance
| RoHS | Compliant |
Datasheet
Stmicroelectronics STGW40N120KD Datasheet
Download the complete datasheet for Stmicroelectronics STGW40N120KD to view detailed technical specifications.
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