Insulated Gate Bipolar Transistor (IGBT) featuring 1200V collector-emitter breakdown voltage and 40A continuous collector current. Offers a low 2.8V collector-emitter saturation voltage and 84ns reverse recovery time. Designed for short-circuit ruggedness, this through-hole component is housed in a TO-247 package with a maximum power dissipation of 240W. Operating temperature range spans from -55°C to 125°C.
PackageTO-247
MountingThrough Hole
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Technical Specifications
Stmicroelectronics STGW40N120KD technical specifications.
General
Package/Case
TO-247
Collector Emitter Breakdown Voltage
1.2kV
Collector Emitter Saturation Voltage
2.8V
Collector Emitter Voltage (VCEO)
1.2kV
Collector-emitter Voltage-Max
3.85V
Height
21.07mm
Input Type
STANDARD
Lead Free
Lead Free
Length
16.02mm
Max Collector Current
80A
Max Operating Temperature
125°C
Min Operating Temperature
-55°C
Max Power Dissipation
240W
Mount
Through Hole
Package Quantity
30
Packaging
Rail/Tube
Radiation Hardening
No
Reach SVHC Compliant
No
Reverse Recovery Time
84ns
RoHS Compliant
Yes
Series
PowerMESH™
Turn-Off Delay Time
420ns
Turn-On Delay Time
48ns
Weight
0.229281oz
Width
5.15mm
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STGW40N120KD Datasheet
Download the complete datasheet for Stmicroelectronics STGW40N120KD to view detailed technical specifications.
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