The STGW40NC60W is a high-power insulated gate bipolar transistor with a collector-emitter breakdown voltage of 600V and a maximum collector current of 70A. It has a maximum power dissipation of 250W and is packaged in a TO-247-3 case with a through-hole mount. The transistor is RoHS compliant and has a maximum operating temperature of 150°C and a minimum operating temperature of -55°C.
PackageTO-247-3
MountingThrough Hole
Power205W
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Technical Specifications
Stmicroelectronics STGW40NC60W technical specifications.
General
| Package/Case | TO-247-3 |
| Collector Emitter Breakdown Voltage | 600V |
| Collector Emitter Saturation Voltage | 2.1V |
| Collector Emitter Voltage (VCEO) | 600V |
| Collector-emitter Voltage-Max | 2.5V |
| Input Type | STANDARD |
| Lead Free | Lead Free |
| Max Collector Current | 70A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 250W |
| Mount | Through Hole |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Power Dissipation | 205W |
| RoHS Compliant | Yes |
| Series | PowerMESH™ |
| Turn-Off Delay Time | 213ns |
| Turn-On Delay Time | 33ns |
Compliance
| RoHS | Compliant |
Datasheet
Stmicroelectronics STGW40NC60W Datasheet
Download the complete datasheet for Stmicroelectronics STGW40NC60W to view detailed technical specifications.
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