N-Channel Insulated Gate Bipolar Transistor (IGBT) with a 600V collector-emitter breakdown voltage and 40A continuous collector current. Features a 2.1V collector-emitter saturation voltage and 250W maximum power dissipation. This through-hole component is housed in a TO-247 package and offers a 45ns reverse recovery time and 33ns turn-on delay. RoHS compliant with an operating temperature range of -55°C to 150°C.
PackageTO-247
Current Rating40A
MountingThrough Hole
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Technical Specifications
Stmicroelectronics STGW40NC60WD technical specifications.
General
Package/Case
TO-247
Collector Emitter Breakdown Voltage
600V
Collector Emitter Saturation Voltage
2.1V
Collector Emitter Voltage (VCEO)
600V
Collector-emitter Voltage-Max
2.5V
Continuous Collector Current
40A
Continuous Drain Current (ID)
40A
Current Rating
40A
Drain to Source Voltage (Vdss)
650V
Height
20.15mm
Input Capacitance
2.9nF
Input Type
STANDARD
Lead Free
Lead Free
Length
15.75mm
Max Collector Current
70A
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
250W
Mount
Through Hole
Package Quantity
30
Packaging
Rail/Tube
Radiation Hardening
No
Reach SVHC Compliant
No
Reverse Recovery Time
45ns
RoHS Compliant
Yes
Series
PowerMESH™
Turn-Off Delay Time
168ns
Turn-On Delay Time
33ns
DC Rated Voltage
600V
Weight
1.340411oz
Width
5.15mm
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STGW40NC60WD Datasheet
Download the complete datasheet for Stmicroelectronics STGW40NC60WD to view detailed technical specifications.
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