N-Channel Insulated Gate Bipolar Transistor (IGBT) with a 600V collector-emitter breakdown voltage and 40A continuous collector current. Features a 2.1V collector-emitter saturation voltage and 250W maximum power dissipation. This through-hole component is housed in a TO-247 package and offers a 45ns reverse recovery time and 33ns turn-on delay. RoHS compliant with an operating temperature range of -55°C to 150°C.
PackageTO-247
Current Rating40A
MountingThrough Hole
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Technical Specifications
Stmicroelectronics STGW40NC60WD technical specifications.
General
| Package/Case | TO-247 |
| Collector Emitter Breakdown Voltage | 600V |
| Collector Emitter Saturation Voltage | 2.1V |
| Collector Emitter Voltage (VCEO) | 600V |
| Collector-emitter Voltage-Max | 2.5V |
| Continuous Collector Current | 40A |
| Continuous Drain Current (ID) | 40A |
| Current Rating | 40A |
| Drain to Source Voltage (Vdss) | 650V |
| Height | 20.15mm |
| Input Capacitance | 2.9nF |
| Input Type | STANDARD |
| Lead Free | Lead Free |
| Length | 15.75mm |
| Max Collector Current | 70A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 250W |
| Mount | Through Hole |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| Reverse Recovery Time | 45ns |
| RoHS Compliant | Yes |
| Series | PowerMESH™ |
| Turn-Off Delay Time | 168ns |
| Turn-On Delay Time | 33ns |
| DC Rated Voltage | 600V |
| Weight | 1.340411oz |
| Width | 5.15mm |
Compliance
| RoHS | Compliant |
Datasheet
Stmicroelectronics STGW40NC60WD Datasheet
Download the complete datasheet for Stmicroelectronics STGW40NC60WD to view detailed technical specifications.
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