The STGW50NC60W is a 600V insulated gate bipolar transistor (IGBT) with a maximum collector current of 100A. It is packaged in a TO-247-3 case and is designed for through-hole mounting. The transistor has a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It is compliant with RoHS regulations and is available in quantities of 30 per package.
PackageTO-247-3
MountingThrough Hole
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Technical Specifications
Stmicroelectronics STGW50NC60W technical specifications.
General
| Package/Case | TO-247-3 |
| Collector Emitter Breakdown Voltage | 600V |
| Collector Emitter Voltage (VCEO) | 600V |
| Collector-emitter Voltage-Max | 2.6V |
| Height | 20.15mm |
| Input Type | STANDARD |
| Length | 15.75mm |
| Max Collector Current | 100A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 285W |
| Mount | Through Hole |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Series | PowerMESH™ |
| Weight | 1.340411oz |
| Width | 5.15mm |
Compliance
| RoHS | Compliant |
Datasheet
Stmicroelectronics STGW50NC60W Datasheet
Download the complete datasheet for Stmicroelectronics STGW50NC60W to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.