The STGW80H65DFB is a 650V insulated gate bipolar transistor with a maximum collector current of 120A. It is packaged in a TO-247-3 case and is designed for through-hole mounting. The transistor has a maximum operating temperature of 175°C and a minimum operating temperature of -55°C. It is lead-free and RoHS compliant.
PackageTO-247-3
MountingThrough Hole
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Technical Specifications
Stmicroelectronics STGW80H65DFB technical specifications.
General
| Package/Case | TO-247-3 |
| Collector Emitter Breakdown Voltage | 650V |
| Collector Emitter Saturation Voltage | 1.6V |
| Collector-emitter Voltage-Max | 2V |
| Height | 20.15mm |
| Input Type | STANDARD |
| Lead Free | Lead Free |
| Length | 15.75mm |
| Max Collector Current | 120A |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 469W |
| Mount | Through Hole |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Reverse Recovery Time | 85ns |
| RoHS Compliant | Yes |
| Weight | 1.340411oz |
| Width | 5.15mm |
Compliance
| RoHS | Compliant |
Datasheet
Stmicroelectronics STGW80H65DFB Datasheet
Download the complete datasheet for Stmicroelectronics STGW80H65DFB to view detailed technical specifications.
No datasheet is available for this part.