N-channel Insulated Gate Bipolar Transistor (IGBT) chip for through-hole mounting in a TO-247 package. Features a 600V collector-emitter voltage, 70A continuous collector current, and 260W maximum power dissipation. Operates across a -55°C to 150°C temperature range with a typical collector-emitter saturation voltage of 1.9V. The 3-pin TO-247 package includes a tab for enhanced thermal management.
PackageTO-247
MountingThrough Hole
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Technical Specifications
Stmicroelectronics STGWA35HF60WDI technical specifications.
General
Basic Package Type
Through Hole
Package Family Name
TO-247
Package/Case
TO-247
Package Description
Transistor Outline Package
Lead Shape
Through Hole
Pin Count
3
PCB
3
Tab
Tab
Package Length (mm)
15.75(Max)
Package Width (mm)
5.15(Max)
Package Height (mm)
20.15(Max)
Seated Plane Height (mm)
24.45(Max)
Pin Pitch (mm)
5.45
Package Material
Plastic
Mounting
Through Hole
Jedec
TO-247
Channel Type
N
Configuration
Single
Maximum Collector-Emitter Voltage
600V
Maximum Gate Emitter Voltage
±20V
Maximum Continuous Collector Current
70A
Maximum Power Dissipation
260000mW
Typical Collector Emitter Saturation Voltage
1.9V
Min Operating Temperature
-55°C
Max Operating Temperature
150°C
Compliance
Cage Code
SCR76
EU RoHS
Yes with Exemption
Schedule B
8541290080
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
Radiation Hardening
No
RoHS Versions
2011/65/EU, 2015/863
Datasheet
Stmicroelectronics STGWA35HF60WDI Datasheet
Download the complete datasheet for Stmicroelectronics STGWA35HF60WDI to view detailed technical specifications.
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