The STGWA40N120KD is an insulated gate bipolar transistor with a collector-emitter breakdown voltage of 1.2kV and a maximum collector current of 80A. It has a maximum power dissipation of 240W and is packaged in a TO-247-3 package for through-hole mounting. The device is RoHS compliant and is part of the PowerMESH series. It has a reverse recovery time of 84ns and is suitable for use in high-power applications.
PackageTO-247-3
MountingThrough Hole
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Technical Specifications
Stmicroelectronics STGWA40N120KD technical specifications.
General
| Package/Case | TO-247-3 |
| Collector Emitter Breakdown Voltage | 1.2kV |
| Collector-emitter Voltage-Max | 3.85V |
| Input Type | STANDARD |
| Max Breakdown Voltage | 1.2kV |
| Max Collector Current | 80A |
| Max Power Dissipation | 240W |
| Mount | Through Hole |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Reverse Recovery Time | 84ns |
| RoHS Compliant | Yes |
| Series | PowerMESH™ |
Compliance
| RoHS | Compliant |
Datasheet
Stmicroelectronics STGWA40N120KD Datasheet
Download the complete datasheet for Stmicroelectronics STGWA40N120KD to view detailed technical specifications.
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