Ultra-fast "W" series Insulated Gate Bipolar Transistor (IGBT) featuring a 600V Collector Emitter Breakdown Voltage and a maximum collector current of 110A. This through-hole component offers a low Collector Emitter Saturation Voltage of 2.5V and a maximum power dissipation of 278W. Designed for high-speed switching, it exhibits a turn-on delay time of 52ns and a turn-off delay time of 240ns, with a reverse recovery time of 55ns. Packaged in a TO-247-3, it operates across a wide temperature range from -55°C to 150°C and is RoHS compliant.
PackageTO-247-3
MountingThrough Hole
Power260W
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Technical Specifications
Stmicroelectronics STGY50NC60WD technical specifications.
General
| Package/Case | TO-247-3 |
| Collector Emitter Breakdown Voltage | 600V |
| Collector Emitter Saturation Voltage | 2.5V |
| Collector Emitter Voltage (VCEO) | 600V |
| Collector-emitter Voltage-Max | 2.6V |
| Height | 20.3mm |
| Input Type | STANDARD |
| Lead Free | Lead Free |
| Length | 15.9mm |
| Max Collector Current | 110A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 278W |
| Mount | Through Hole |
| Package Quantity | 600 |
| Packaging | Rail/Tube |
| Power Dissipation | 260W |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| Reverse Recovery Time | 55ns |
| RoHS Compliant | Yes |
| Series | PowerMESH™ |
| Termination | Through Hole |
| Turn-Off Delay Time | 240ns |
| Turn-On Delay Time | 52ns |
| Width | 5.3mm |
Compliance
| RoHS | Compliant |
Datasheet
Stmicroelectronics STGY50NC60WD Datasheet
Download the complete datasheet for Stmicroelectronics STGY50NC60WD to view detailed technical specifications.
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