Ultra-fast "W" series Insulated Gate Bipolar Transistor (IGBT) featuring a 600V Collector Emitter Breakdown Voltage and a maximum collector current of 110A. This through-hole component offers a low Collector Emitter Saturation Voltage of 2.5V and a maximum power dissipation of 278W. Designed for high-speed switching, it exhibits a turn-on delay time of 52ns and a turn-off delay time of 240ns, with a reverse recovery time of 55ns. Packaged in a TO-247-3, it operates across a wide temperature range from -55°C to 150°C and is RoHS compliant.
PackageTO-247-3
MountingThrough Hole
Power260W
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Technical Specifications
Stmicroelectronics STGY50NC60WD technical specifications.
General
Package/Case
TO-247-3
Collector Emitter Breakdown Voltage
600V
Collector Emitter Saturation Voltage
2.5V
Collector Emitter Voltage (VCEO)
600V
Collector-emitter Voltage-Max
2.6V
Height
20.3mm
Input Type
STANDARD
Lead Free
Lead Free
Length
15.9mm
Max Collector Current
110A
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
278W
Mount
Through Hole
Package Quantity
600
Packaging
Rail/Tube
Power Dissipation
260W
Radiation Hardening
No
Reach SVHC Compliant
No
Reverse Recovery Time
55ns
RoHS Compliant
Yes
Series
PowerMESH™
Termination
Through Hole
Turn-Off Delay Time
240ns
Turn-On Delay Time
52ns
Width
5.3mm
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STGY50NC60WD Datasheet
Download the complete datasheet for Stmicroelectronics STGY50NC60WD to view detailed technical specifications.
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