STMICROELECTRONICS

STH180N10F3-6

Datasheet

100V 180A N-CH MOSFET TO-263-7 4.5mR 315W SM

Stmicroelectronics

STH180N10F3-6

Name: STH180N10F3-6 Stmicroelectronics
Brand: Stmicroelectronics
SKU: STH180N10F3-6

100V 180A N-CH MOSFET TO-263-7 4.5mR 315W SM

N-Channel Power MOSFET, TO-263-7 package, offering 100V drain-source breakdown voltage and 180A continuous drain current. Features low 4.5mR drain-source on-resistance and 315W maximum power dissipation. Operates from -55°C to 175°C with a 2V threshold voltage. Includes fast switching characteristics with 25.6ns turn-on and 6.9ns fall times. Surface mount design, RoHS compliant.

PackageTO-263-7

MountingSurface Mount

PolarityN-CHANNEL

Power315W

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Technical Specifications

Stmicroelectronics STH180N10F3-6 technical specifications.

General

Package/Case	TO-263-7
Continuous Drain Current (ID)	180A
Drain to Source Breakdown Voltage	100V
Drain to Source Resistance	4.5mR
Drain to Source Voltage (Vdss)	100V
Drain-source On Resistance-Max	4.5MR
Fall Time	6.9ns
Gate to Source Voltage (Vgs)	20V
Height	4.8mm
Input Capacitance	6.665nF
Lead Free	Lead Free
Length	15.25mm
Max Operating Temperature	175°C
Min Operating Temperature	-55°C
Max Power Dissipation	315W
Mount	Surface Mount
Package Quantity	1
Packaging	Tape and Reel
Polarity	N-CHANNEL
Power Dissipation	315W
Radiation Hardening	No
Rds On Max	4.5mR
Reach SVHC Compliant	No
RoHS Compliant	Yes
Series	STripFET™ III
Threshold Voltage	2V
Turn-Off Delay Time	99.9ns
Turn-On Delay Time	25.6ns
Width	10.4mm