STH210N75F6-2

N-CH MOSFET 75V 180A 2.8mR TO-263-3 SM

N-channel MOSFET, 75V Drain to Source Breakdown Voltage, 180A Continuous Drain Current, and 2.8mΩ Max Drain-Source On-Resistance. Features a 300W Max Power Dissipation and operates within a -55°C to 175°C temperature range. Surface mountable in a TO-263-3 package, this component offers fast switching with a 34ns Turn-On Delay Time and 71ns Fall Time. RoHS compliant and Lead Free.

PackageTO-263-3

MountingSurface Mount

PolarityN-CHANNEL

Power300W

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Technical Specifications

Stmicroelectronics STH210N75F6-2 technical specifications.

General

Package/Case	TO-263-3
Continuous Drain Current (ID)	180A
Drain to Source Breakdown Voltage	75V
Drain to Source Resistance	2.8mR
Drain to Source Voltage (Vdss)	75V
Drain-source On Resistance-Max	2.8MR
Fall Time	71ns
Gate to Source Voltage (Vgs)	20V
Height	4.8mm
Input Capacitance	11.8nF
Lead Free	Lead Free
Length	15.8mm
Max Operating Temperature	175°C
Min Operating Temperature	-55°C
Max Power Dissipation	300W
Mount	Surface Mount
Number of Elements	1
Package Quantity	1
Packaging	Tape and Reel
Polarity	N-CHANNEL
Power Dissipation	300W
Radiation Hardening	No
Rds On Max	2.8mR
Reach SVHC Compliant	No
RoHS Compliant	Yes
Series	DeepGATE™, STripFET™ VI
Threshold Voltage	2V
Turn-Off Delay Time	154ns
Turn-On Delay Time	34ns
Width	10.4mm