N-channel enhancement mode power MOSFET, featuring 75V drain-source voltage and 180A continuous drain current. This single-element transistor utilizes STripFET process technology and offers a low drain-source on-resistance of 3 mOhm at 10V. Packaged in an H2PAK surface-mount configuration with gull-wing leads, it provides a 3-pin (2+Tab) connection. Maximum power dissipation is rated at 300W, with an operating temperature range of -55°C to 175°C.
PackageH2PAK
MountingSurface Mount
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Technical Specifications
Stmicroelectronics STH240N75F3-2 technical specifications.
General
| Basic Package Type | Lead-Frame SMT |
| Package/Case | H2PAK |
| Lead Shape | Gull-wing |
| Pin Count | 3 |
| PCB | 2 |
| Tab | Tab |
| Package Length (mm) | 10.4(Max) |
| Package Width (mm) | 9.17(Max) |
| Package Height (mm) | 4.8(Max) |
| Seated Plane Height (mm) | 5(Max) |
| Package Material | Plastic |
| Mounting | Surface Mount |
| Configuration | Single Dual Source |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Process Technology | STripFET |
| Maximum Drain Source Voltage | 75V |
| Maximum Gate Source Voltage | ±20V |
| Maximum Continuous Drain Current | 180A |
| Maximum Gate Threshold Voltage | 4V |
| Maximum Drain Source Resistance | 3@10VmOhm |
| Typical Gate Charge @ Vgs | 87@10VnC |
| Typical Gate Charge @ 10V | 87nC |
| Typical Input Capacitance @ Vds | 6800pF |
| Maximum Power Dissipation | 300000mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 175°C |
Compliance
| Cage Code | SCR76 |
| EU RoHS | Yes with Exemption |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| RoHS Versions | 2011/65/EU, 2015/863 |
Datasheet
Stmicroelectronics STH240N75F3-2 Datasheet
Download the complete datasheet for Stmicroelectronics STH240N75F3-2 to view detailed technical specifications.
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