N-channel power MOSFET featuring 24V drain-source breakdown voltage and 180A continuous drain current. Offers a low 0.95 mOhm typical drain-source on-resistance. Designed for surface mount applications in an H2PAK-6 package, it operates across a wide temperature range from -55°C to 175°C with a maximum power dissipation of 300W. This RoHS compliant component exhibits fast switching characteristics with a turn-on delay of 18ns and a fall time of 94.4ns.
Stmicroelectronics STH300NH02L-6 technical specifications.
| Package/Case | TO-263-7 |
| Continuous Drain Current (ID) | 180A |
| Drain to Source Breakdown Voltage | 24V |
| Drain to Source Resistance | 1.2mR |
| Drain to Source Voltage (Vdss) | 24V |
| Drain-source On Resistance-Max | 1.2MR |
| Fall Time | 94.4ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 7.05nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 300W |
| Mount | Surface Mount |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 300W |
| Radiation Hardening | No |
| Rds On Max | 1.2mR |
| RoHS Compliant | Yes |
| Series | STripFET™ |
| Turn-Off Delay Time | 138ns |
| Turn-On Delay Time | 18ns |
| RoHS | Compliant |
Download the complete datasheet for Stmicroelectronics STH300NH02L-6 to view detailed technical specifications.
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