Automotive-grade N-channel power MOSFET featuring 100V drain-source breakdown voltage and 180A continuous drain current. This surface-mount device offers a low 2.1 mOhm typical drain-source on-resistance and 315W maximum power dissipation. Designed with STripFET F7 technology, it operates across a wide temperature range from -55°C to 175°C. The component is packaged in a TO-263-7 H2PAK-6 for efficient thermal management.
PackageTO-263-7
MountingSurface Mount
PolarityN-CHANNEL
Power315W
Quick Jump:
Technical Specifications
Stmicroelectronics STH315N10F7-6 technical specifications.
General
| Package/Case | TO-263-7 |
| Continuous Drain Current (ID) | 180A |
| Drain to Source Breakdown Voltage | 100V |
| Drain to Source Resistance | 2.3mR |
| Drain to Source Voltage (Vdss) | 100V |
| Fall Time | 40ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 12.8nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 315W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Package Quantity | 1000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 315W |
| Rds On Max | 2.3mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | DeepGATE™, STripFET™ VII |
| Threshold Voltage | 3.5V |
| Turn-Off Delay Time | 148ns |
| Turn-On Delay Time | 62ns |
| Weight | 0.056438oz |
Compliance
| RoHS | Compliant |
Datasheet
Stmicroelectronics STH315N10F7-6 Datasheet
Download the complete datasheet for Stmicroelectronics STH315N10F7-6 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.