Stmicroelectronics
STH360N4F6-2
N-channel 40 V, 180 A STripFET(TM) VI DeepGATE(TM) Power MOSFET in H2PAK-2 package
PackageTO-263-3
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Stmicroelectronics STH360N4F6-2 technical specifications.
General
| Package/Case | TO-263-3 |
| Continuous Drain Current (ID) | 180A |
| Drain to Source Breakdown Voltage | 40V |
| Drain to Source Resistance | 1.25mR |
| Drain to Source Voltage (Vdss) | 40V |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 17.93nF |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 300W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 1.25mR |
| RoHS Compliant | Yes |
| Series | DeepGATE™, STripFET™ VI |
| Weight | 0.139332oz |
Compliance
| RoHS | Compliant |
Datasheet
Stmicroelectronics STH360N4F6-2 Datasheet
Download the complete datasheet for Stmicroelectronics STH360N4F6-2 to view detailed technical specifications.
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