Automotive N-channel Power MOSFET featuring STripFET process technology. This single-element enhancement mode transistor offers a maximum drain-source voltage of 40V and a continuous drain current of 180A. It is housed in a 7-pin H2PAK surface-mount package with gull-wing leads, designed for high power dissipation up to 300W. Key specifications include a low drain-source on-resistance of 1.15mΩ at 10V and a gate charge of 377nC.
PackageH2PAK
MountingSurface Mount
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Technical Specifications
Stmicroelectronics STH400N4F6-6 technical specifications.
General
| Basic Package Type | Lead-Frame SMT |
| Package/Case | H2PAK |
| Lead Shape | Gull-wing |
| Pin Count | 7 |
| PCB | 6 |
| Tab | Tab |
| Package Length (mm) | 10.4(Max) |
| Package Width (mm) | 8.9(Max) |
| Package Height (mm) | 4.8(Max) |
| Seated Plane Height (mm) | 5(Max) |
| Pin Pitch (mm) | 1.37(Max) |
| Package Material | Plastic |
| Mounting | Surface Mount |
| Configuration | Single Hex Source |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Process Technology | STripFET |
| Maximum Drain Source Voltage | 40V |
| Maximum Gate Source Voltage | ±20V |
| Maximum Continuous Drain Current | 180A |
| Maximum Gate Threshold Voltage | 4.5V |
| Maximum Drain Source Resistance | 1.15@10VmOhm |
| Typical Gate Charge @ Vgs | 377@10VnC |
| Typical Gate Charge @ 10V | 377nC |
| Typical Input Capacitance @ Vds | 20000@25VpF |
| Maximum Power Dissipation | 300000mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 175°C |
Compliance
| Cage Code | SCR76 |
| EU RoHS | Yes with Exemption |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | Yes |
| AEC Qualified | Yes |
| RoHS Versions | 2011/65/EU, 2015/863 |
Datasheet
Stmicroelectronics STH400N4F6-6 Datasheet
Download the complete datasheet for Stmicroelectronics STH400N4F6-6 to view detailed technical specifications.
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