Stmicroelectronics
STI10N62K3
8.4A, 620V, 0.75ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA, ROHS COMPLIANT, TO-262, I2PAK-3
PackageTO-262-3
MountingThrough Hole
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Technical Specifications
Stmicroelectronics STI10N62K3 technical specifications.
General
| Package/Case | TO-262-3 |
| Continuous Drain Current (ID) | 8.4A |
| Drain to Source Voltage (Vdss) | 620V |
| Fall Time | 31ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 10.75mm |
| Input Capacitance | 1.25nF |
| Length | 10.4mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 125W |
| Mount | Through Hole |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Radiation Hardening | No |
| Rds On Max | 750mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | No |
| Series | SuperMESH3™ |
| Threshold Voltage | 3.75V |
| Turn-Off Delay Time | 41ns |
| Turn-On Delay Time | 14.5ns |
| Width | 4.6mm |
Compliance
| RoHS | Not CompliantNo |
Datasheet
Stmicroelectronics STI10N62K3 Datasheet
Download the complete datasheet for Stmicroelectronics STI10N62K3 to view detailed technical specifications.
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