N-CHANNEL POWER MOSFET featuring 650V drain-source breakdown voltage and 8.5A continuous drain current. Offers 430mΩ drain-source resistance (Rds On Max) and 70W maximum power dissipation. Designed for through-hole mounting in a TO-262-3 package, this RoHS compliant component boasts a 4V threshold voltage and fast switching characteristics with a 15.6ns fall time. Operating temperature range spans from -55°C to 150°C.
PackageTO-262-3
MountingThrough Hole
PolarityN-CHANNEL
Power70W
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Technical Specifications
Stmicroelectronics STI12N65M5 technical specifications.
General
| Package/Case | TO-262-3 |
| Continuous Drain Current (ID) | 8.5A |
| Drain to Source Breakdown Voltage | 650V |
| Drain to Source Resistance | 430mR |
| Drain to Source Voltage (Vdss) | 650V |
| Fall Time | 15.6ns |
| Gate to Source Voltage (Vgs) | 25V |
| Height | 9.35mm |
| Input Capacitance | 900pF |
| Length | 10.4mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 70W |
| Mount | Through Hole |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 70W |
| Radiation Hardening | No |
| Rds On Max | 430mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | MDmesh™ V |
| Threshold Voltage | 4V |
| Turn-Off Delay Time | 15.6ns |
| Turn-On Delay Time | 22.6ns |
| Width | 4.6mm |
Compliance
| RoHS | Compliant |
Datasheet
Stmicroelectronics STI12N65M5 Datasheet
Download the complete datasheet for Stmicroelectronics STI12N65M5 to view detailed technical specifications.
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