N-channel Power MOSFET with 650V drain-source breakdown voltage and 12A continuous drain current. Features 230mΩ drain-source resistance at 10V gate-source voltage. Operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 90W. Packaged in TO-262-3 for through-hole mounting. RoHS compliant.
PackageTO-262-3
MountingThrough Hole
PolarityN-CHANNEL
Power25W
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Technical Specifications
Stmicroelectronics STI16N65M5 technical specifications.
General
| Package/Case | TO-262-3 |
| Continuous Drain Current (ID) | 12A |
| Drain to Source Breakdown Voltage | 650V |
| Drain to Source Resistance | 230mR |
| Drain to Source Voltage (Vdss) | 650V |
| Fall Time | 8ns |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 1.25nF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 90W |
| Mount | Through Hole |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 25W |
| Radiation Hardening | No |
| Rds On Max | 279mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | MDmesh™ |
| Threshold Voltage | 4V |
| Turn-Off Delay Time | 6ns |
| Turn-On Delay Time | 25ns |
Compliance
| RoHS | Compliant |
Datasheet
Stmicroelectronics STI16N65M5 Datasheet
Download the complete datasheet for Stmicroelectronics STI16N65M5 to view detailed technical specifications.
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