PackageTO-262-3
Resistance-0.25R
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Stmicroelectronics STI19NM65N technical specifications.
General
| Package/Case | TO-262-3 |
| Continuous Drain Current (ID) | 15.5A |
| Drain to Source Breakdown Voltage | 650V |
| Drain to Source Resistance | 270mR |
| Drain to Source Voltage (Vdss) | 650V |
| Fall Time | 26ns |
| Gate to Source Voltage (Vgs) | 25V |
| Input Capacitance | 1.9nF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 150W |
| Mount | Through Hole |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 150W |
| Rds On Max | 270mR |
| Resistance | -0.25R |
| RoHS Compliant | Yes |
| Series | MDmesh™ II |
| Turn-Off Delay Time | 80ns |
Compliance
| RoHS | Compliant |
Datasheet
Stmicroelectronics STI19NM65N Datasheet
Download the complete datasheet for Stmicroelectronics STI19NM65N to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.