N-channel power MOSFET with 600V drain-source voltage and 16A continuous drain current. Features 220mΩ maximum Rds(on) and 125W maximum power dissipation. Operates from -55°C to 150°C with a 3V gate threshold voltage. Packaged in a TO-262-3 through-hole mount, this RoHS compliant component offers fast switching with a 11ns turn-on delay and 38ns fall time.
PackageTO-262-3
MountingThrough Hole
Quick Jump:
Technical Specifications
Stmicroelectronics STI22NM60N technical specifications.
General
| Package/Case | TO-262-3 |
| Continuous Drain Current (ID) | 16A |
| Drain to Source Voltage (Vdss) | 600V |
| Fall Time | 38ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 10.75mm |
| Input Capacitance | 1.33nF |
| Length | 10.4mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 125W |
| Mount | Through Hole |
| Nominal Vgs | 3V |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Radiation Hardening | No |
| Rds On Max | 220mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | MDmesh™ II |
| Threshold Voltage | 3V |
| Turn-Off Delay Time | 74ns |
| Turn-On Delay Time | 11ns |
| Width | 4.6mm |
Compliance
| RoHS | Compliant |
Datasheet
Stmicroelectronics STI22NM60N Datasheet
Download the complete datasheet for Stmicroelectronics STI22NM60N to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.