Stmicroelectronics
STI23NM60N
19A, 600V, 0.18ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA, ROHS COMPLIANT, TO-262, I2PAK-3
PackageTO-262-3
MountingThrough Hole
PolarityN-CHANNEL
Power150W
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Technical Specifications
Stmicroelectronics STI23NM60N technical specifications.
General
| Package/Case | TO-262-3 |
| Continuous Drain Current (ID) | 19A |
| Drain to Source Breakdown Voltage | 600V |
| Drain to Source Resistance | 180mR |
| Drain to Source Voltage (Vdss) | 600V |
| Fall Time | 36ns |
| Gate to Source Voltage (Vgs) | 25V |
| Input Capacitance | 2.05nF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 150W |
| Mount | Through Hole |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 150W |
| Radiation Hardening | No |
| Rds On Max | 180mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | MDmesh™ II |
| Threshold Voltage | 3V |
| Turn-Off Delay Time | 90ns |
| Turn-On Delay Time | 25ns |
Compliance
| RoHS | Compliant |
Datasheet
Stmicroelectronics STI23NM60N Datasheet
Download the complete datasheet for Stmicroelectronics STI23NM60N to view detailed technical specifications.
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