N-channel Power MOSFET featuring 600V drain-source voltage and 17A continuous drain current. This MDmesh™ II device offers a low 190mΩ Rds On and 125W power dissipation. Designed for through-hole mounting in a TO-262-3 package, it boasts fast switching characteristics with a 11.5ns turn-on delay and 37ns fall time. Operating across a wide temperature range from -55°C to 150°C, this RoHS compliant component is suitable for demanding power applications.
PackageTO-262-3
MountingThrough Hole
Power125W
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Technical Specifications
Stmicroelectronics STI24NM60N technical specifications.
General
| Package/Case | TO-262-3 |
| Continuous Drain Current (ID) | 17A |
| Drain to Source Voltage (Vdss) | 600V |
| Fall Time | 37ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 10.75mm |
| Input Capacitance | 1.4nF |
| Lead Free | Lead Free |
| Length | 10.4mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 125W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Power Dissipation | 125W |
| Radiation Hardening | No |
| Rds On Max | 190mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | MDmesh™ II |
| Threshold Voltage | 3V |
| Turn-Off Delay Time | 73ns |
| Turn-On Delay Time | 11.5ns |
| Width | 4.6mm |
Compliance
| RoHS | Compliant |
Datasheet
Stmicroelectronics STI24NM60N Datasheet
Download the complete datasheet for Stmicroelectronics STI24NM60N to view detailed technical specifications.
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