The STI24NM65N is a 19A N-CHANNEL MOSFET with a breakdown voltage of 650V and a maximum power dissipation of 160W. It is packaged in a TO-262-3 case and is designed for through hole mounting. The device operates over a temperature range of -55°C to 150°C and is RoHS compliant. The STI24NM65N is part of the MDmesh II series and features a maximum drain to source resistance of 190mR.
PackageTO-262-3
MountingThrough Hole
PolarityN-CHANNEL
Power160W
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Technical Specifications
Stmicroelectronics STI24NM65N technical specifications.
General
| Package/Case | TO-262-3 |
| Continuous Drain Current (ID) | 19A |
| Drain to Source Breakdown Voltage | 650V |
| Drain to Source Resistance | 190mR |
| Drain to Source Voltage (Vdss) | 650V |
| Fall Time | 20ns |
| Gate to Source Voltage (Vgs) | 25V |
| Input Capacitance | 2.5nF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 160W |
| Mount | Through Hole |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 160W |
| Radiation Hardening | No |
| Rds On Max | 190mR |
| RoHS Compliant | Yes |
| Series | MDmesh™ II |
| Turn-Off Delay Time | 80ns |
| Turn-On Delay Time | 25ns |
Compliance
| RoHS | Compliant |
Datasheet
Stmicroelectronics STI24NM65N Datasheet
Download the complete datasheet for Stmicroelectronics STI24NM65N to view detailed technical specifications.
No datasheet is available for this part.