STMICROELECTRONICS

STI30N65M5

Datasheet

650V 22A N-CH MOSFET TO-262 139mR Power Transistor

Stmicroelectronics

STI30N65M5

Name: STI30N65M5 Stmicroelectronics
Brand: Stmicroelectronics
SKU: STI30N65M5

650V 22A N-CH MOSFET TO-262 139mR Power Transistor

N-Channel Power MOSFET, 650V Drain to Source Voltage, 22A Continuous Drain Current, and 139mΩ Max Drain to Source Resistance. Features a 4V Threshold Voltage, 2.88nF Input Capacitance, and 140W Max Power Dissipation. Packaged in a TO-262-3 (I2PAK) through-hole mount configuration, this RoHS compliant component offers fast switching with 50ns turn-on and turn-off delay times. Operates from -55°C to 150°C.

PackageTO-262-3

MountingThrough Hole

PolarityN-CHANNEL

Power140W

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Technical Specifications

Stmicroelectronics STI30N65M5 technical specifications.

General

Package/Case	TO-262-3
Continuous Drain Current (ID)	22A
Drain to Source Breakdown Voltage	650V
Drain to Source Resistance	125mR
Drain to Source Voltage (Vdss)	650V
Fall Time	10ns
Gate to Source Voltage (Vgs)	25V
Height	10.75mm
Input Capacitance	2.88nF
Length	10.4mm
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Max Power Dissipation	140W
Mount	Through Hole
Package Quantity	50
Packaging	Rail/Tube
Polarity	N-CHANNEL
Power Dissipation	140W
Radiation Hardening	No
Rds On Max	139mR
Reach SVHC Compliant	No
RoHS Compliant	Yes
Series	MDmesh™
Threshold Voltage	4V
Turn-Off Delay Time	50ns
Turn-On Delay Time	50ns
Width	4.6mm